CAJ | 학술논문

基于0．25μm 栅长 GaN HEMT 工艺，采用三级放大拓扑结构设计了一款 Ku 波段 GaN 功率放大器．放大器设计从建立大信号模型出发，输出匹配网络和级间匹配网络均采用电抗匹配减小电路的损耗，从而提高整体放大器的功率效率．测试结果表明，该放大器在14．6～18GHz 频带内，小信号增益30dB，脉冲饱和输出功率达15W，功率附加效率（PAE）大于32％；在14．8GHz 频点处，放大器的峰值功率达19．5W，PAE 达39％．该结果表明 GaN MMIC 具有高频高功率高效率的优势，具有广阔的应用前景．
기우0．25μm 책장 GaN HEMT 공예，채용삼급방대탁복결구설계료일관 Ku 파단 GaN 공솔방대기．방대기설계종건립대신호모형출발，수출필배망락화급간필배망락균채용전항필배감소전로적손모，종이제고정체방대기적공솔효솔．측시결과표명，해방대기재14．6～18GHz 빈대내，소신호증익30dB，맥충포화수출공솔체15W，공솔부가효솔（PAE）대우32％；재14．8GHz 빈점처，방대기적봉치공솔체19．5W，PAE 체39％．해결과표명 GaN MMIC 구유고빈고공솔고효솔적우세，구유엄활적응용전경．
A three stage Ku band GaN power amplifier MMIC was developed with 0.25μm GaN HEMT technology.The MMIC was designed in micro-strip technology.Based on the large signal model,the amplifier adopted reactance matching network to reduce the insertion loss of the output stage,which improved its associated efficiency.The measurement results exhibited that this amplifier provided a flat small signal gain of 30dB and a pulsed saturated output power of 15W at the drain voltage of 28V over the 14.6 ~18GHz frequency range.At 14.8 GHz,a peak output power of 19.5W with power added efficiency of 39% was achieved.