表面技术
錶麵技術
표면기술
Surface Technology
2015年
10期
63-67,85
,共6页
王清%陈建钧%相颖杰%厚康%何丹
王清%陳建鈞%相穎傑%厚康%何丹
왕청%진건균%상영걸%후강%하단
缝式喷嘴%高硅钢%渗硅速率%反应温度%SiCl4 气体浓度%气体流量
縫式噴嘴%高硅鋼%滲硅速率%反應溫度%SiCl4 氣體濃度%氣體流量
봉식분취%고규강%삼규속솔%반응온도%SiCl4 기체농도%기체류량
slot nozzle%high silicon steel (6. 5％Si)%siliconizing rate%reaction temperature%concent fraction of SiCl4%gas flow
目的：研究基于缝式喷嘴的SiCl4和N2混合气体的喷射工艺参数对CVD法制备6.5%Si钢渗硅速率的影响。方法采用不同的反应温度、SiCl4气体体积分数、混合气体流量进行渗硅实验,通过扫描电镜、能谱分析、失重比研究这3个参数对渗硅速率的影响,并对比分析喷嘴喷射反应气体和均匀气氛对渗硅速率的影响。结果缝式喷嘴喷射反应气体能极大提升渗硅速率。随着温度的升高,渗硅速率不断升高,达到1100℃后,渗硅速率趋于饱和不再有明显变化。随着SiCl4气体体积分数和混合气体流量的升高,渗硅速率均先升高,再逐渐降低,当SiCl4气体体积分数为15%时,渗硅速率达到最大；当混合气体流量为1 L/min时,渗硅速率达到峰值。结论 CVD法制备6.5%Si钢时,采用缝式喷嘴喷射反应气体具有明显的优势,最佳工艺参数为：反应温度1170℃,SiCl4气体体积分数15%,混合气体流量1 L/min。
目的：研究基于縫式噴嘴的SiCl4和N2混閤氣體的噴射工藝參數對CVD法製備6.5%Si鋼滲硅速率的影響。方法採用不同的反應溫度、SiCl4氣體體積分數、混閤氣體流量進行滲硅實驗,通過掃描電鏡、能譜分析、失重比研究這3箇參數對滲硅速率的影響,併對比分析噴嘴噴射反應氣體和均勻氣氛對滲硅速率的影響。結果縫式噴嘴噴射反應氣體能極大提升滲硅速率。隨著溫度的升高,滲硅速率不斷升高,達到1100℃後,滲硅速率趨于飽和不再有明顯變化。隨著SiCl4氣體體積分數和混閤氣體流量的升高,滲硅速率均先升高,再逐漸降低,噹SiCl4氣體體積分數為15%時,滲硅速率達到最大；噹混閤氣體流量為1 L/min時,滲硅速率達到峰值。結論 CVD法製備6.5%Si鋼時,採用縫式噴嘴噴射反應氣體具有明顯的優勢,最佳工藝參數為：反應溫度1170℃,SiCl4氣體體積分數15%,混閤氣體流量1 L/min。
목적：연구기우봉식분취적SiCl4화N2혼합기체적분사공예삼수대CVD법제비6.5%Si강삼규속솔적영향。방법채용불동적반응온도、SiCl4기체체적분수、혼합기체류량진행삼규실험,통과소묘전경、능보분석、실중비연구저3개삼수대삼규속솔적영향,병대비분석분취분사반응기체화균균기분대삼규속솔적영향。결과봉식분취분사반응기체능겁대제승삼규속솔。수착온도적승고,삼규속솔불단승고,체도1100℃후,삼규속솔추우포화불재유명현변화。수착SiCl4기체체적분수화혼합기체류량적승고,삼규속솔균선승고,재축점강저,당SiCl4기체체적분수위15%시,삼규속솔체도최대；당혼합기체류량위1 L/min시,삼규속솔체도봉치。결론 CVD법제비6.5%Si강시,채용봉식분취분사반응기체구유명현적우세,최가공예삼수위：반응온도1170℃,SiCl4기체체적분수15%,혼합기체류량1 L/min。
Objective To investigate the influence of the SiCl4 and N2 mixture ejection parameter by using a slot nozzle on the siliconizing rate during the preparation of 6. 5%Si steel by CVD method. Methods The siliconizing experiment was conducted at different reaction temperatures, volume fractions of SiCl4 gas, and mixture gas flows. The impact of these factors on the siliconizing rate was analyzed by scanning electron microscope, energy spectrum analysis and weightlessness ratio analysis. And the comparison of siliconizing rates under ejection by slot nozzle and uniform atmosphere was conducted. Results The siliconizing rate was signifi-cantly improved by the application of slot nozzle. The siliconizing rate continuously increased with increasing temperature. After the temperature reached 1100 ℃, the siliconizing rate tended to saturate and did not show obvious change with further increase of the temperature. And the siliconizing rate increased firstly and then gradually decreased with the increase of SiCl4 concentrations and mixture gas flows, when the concentration of SiCl4 was 15%, the siliconizing rate reached the maximum; when the gas flow rate was 1 L/min, the siliconizing rate reached the peak value. Conclusions There was a great advantage by using slot nozzle to inject reaction gas in the preparation of 6. 5%Si steel with CVD method. Moreover, the siliconizing rate was the highest when the reaction temperature was 1170 ℃, SiCl4 gas volume fraction was 15%, and gas mixture flow was 1 L/min.
