CAJ | 학술논문

以Y2O3作为Ni81Fe19薄膜的氧化插层，利用磁控溅射法制备了一系列不同插层厚度的Ni81Fe19薄膜样品Ta(4nm)/ Y2O3(t)/Ni81Fe19(20nm)/ Y2O3(t)/Ta(3nm)，利用非共线四探针法测量薄膜样品的各向异性磁电阻（AMR），用振动样品磁强计测量样品的磁滞回线，利用X射线衍射仪（XRD）分析样品薄膜结构，研究了Y2O3插层厚度对 Ni81Fe19薄膜各向异性磁电阻的影响。结果表明，在基片温度为450℃时，Ni81Fe19薄膜 AMR 值随插层厚度增加先增后减，在插层厚度为2.5nm时样品具有最大AMR，其值为4.61%，比无插层样品的2.69%提高了71.3%。
이Y2O3작위Ni81Fe19박막적양화삽층，이용자공천사법제비료일계렬불동삽층후도적Ni81Fe19박막양품Ta(4nm)/ Y2O3(t)/Ni81Fe19(20nm)/ Y2O3(t)/Ta(3nm)，이용비공선사탐침법측량박막양품적각향이성자전조（AMR），용진동양품자강계측량양품적자체회선，이용X사선연사의（XRD）분석양품박막결구，연구료Y2O3삽층후도대 Ni81Fe19박막각향이성자전조적영향。결과표명，재기편온도위450℃시，Ni81Fe19박막 AMR 치수삽층후도증가선증후감，재삽층후도위2.5nm시양품구유최대AMR，기치위4.61%，비무삽층양품적2.69%제고료71.3%。
A series of Ta(4nm)/Y2O3(t)/Ni81Fe19(20nm)/Y2O3(t)/Ta(3nm) films were prepared on glass substrates by magnetron sputtering under appropriate conditions. AMR value, phase composition and magnetic hysteresis hoop of Ni81Fe19 films were measured and analyzed by four-point probe technology, X-ray diffraction(XRD) and vibrating sample magnetometer(VSM), respectively. Influence of Y2O3 which work as oxidation intercalation on AMR values of Ni81Fe19 films was investigated. The experiment result shows that, at the substrate temperature of 450℃, the AMR value of the film with Y2O3 layer thickness of 2.5nm can reach 4.61% , increasing by 71.3% compared to that of film without Y2O3 layer.