CAJ | 학술논문

理论估算并实验验证了在X射线脉冲激发下低温砷化镓的光学折射率调制特性.泵浦-探针实验表明,低温砷化镓中存在的高密度复合缺陷大大减小了载流子寿命,使超热电子的弛豫时间小于1×10-12 s,载流子的复合时间小于 2×10-12 s,折射率的扰动时间约为2×10-12 s.通过理论分析,给出了自由载流子和俄歇效应对该弛豫过程的定量估算,与实验结果吻合较好.该研究表明低温生长砷化镓是一种有效的可用于单次瞬态皮秒时间分辨X射线探测的材料.
이론고산병실험험증료재X사선맥충격발하저온신화가적광학절사솔조제특성.빙포-탐침실험표명,저온신화가중존재적고밀도복합결함대대감소료재류자수명,사초열전자적이예시간소우1×10-12 s,재류자적복합시간소우 2×10-12 s,절사솔적우동시간약위2×10-12 s.통과이론분석,급출료자유재류자화아헐효응대해이예과정적정량고산,여실험결과문합교호.해연구표명저온생장신화가시일충유효적가용우단차순태피초시간분변X사선탐측적재료.
The optical index modulation was theoretically estimated and demonstrated under short X-ray excitation in low-temperature-grown GaAs (LT_GaAs). Hot-electron thermalization time <1 ps, carrier recombination time <2 ps and the duration of the index perturbation was determined by the carrier recombination time which was of order -2 ps in LT_GaAs with a high density of recombination defects. Predictions of radiation -induced changed in the optical refractive index were in reasonably good agreement with the limited experimental data available, suggesting that LT_GaAs was a highly promising material for high speed single transient ionizing radiation detector.