红外与激光工程
紅外與激光工程
홍외여격광공정
Infrared and Laser Engineering
2015年
10期
2995-2999
,共5页
胡小英%刘卫国%段存丽%蔡长龙%牛小玲
鬍小英%劉衛國%段存麗%蔡長龍%牛小玲
호소영%류위국%단존려%채장룡%우소령
量子阱红外探测器%高分辨透射扫描电镜%GaAs/AlxGa1-xAs%峰值波长
量子阱紅外探測器%高分辨透射掃描電鏡%GaAs/AlxGa1-xAs%峰值波長
양자정홍외탐측기%고분변투사소묘전경%GaAs/AlxGa1-xAs%봉치파장
QWIP%HRTEM%GaAs/AlxGa1-xAs%peak wavelength
为了确定束缚态到准束缚态工作模式QWIP响应波长与势垒高度关系,采用金属有机物化学气相沉积法生长制备势垒高度不同GaAs/AlxGa1-xAs QWIP样品,采用傅里叶光谱仪对样品进行77 K液氮温度光谱测试.结果显示1#,2#样品峰值响应波长与据薛定谔方程得到峰值波长误差为15.6%, 4.6%.结果表明:引起量子阱中子带间距离逐渐扩大与峰值响应波长蓝移的根本原因是势垒高度的增加.高分辨透射扫描电镜实验结果表明量子阱材料生长过程精度控制不够及AlGaAs与GaAs晶格不匹配是造成1#样品误差较大的主要原因.说明调节势垒高度可实现QWIP峰值波长微调的目的.
為瞭確定束縳態到準束縳態工作模式QWIP響應波長與勢壘高度關繫,採用金屬有機物化學氣相沉積法生長製備勢壘高度不同GaAs/AlxGa1-xAs QWIP樣品,採用傅裏葉光譜儀對樣品進行77 K液氮溫度光譜測試.結果顯示1#,2#樣品峰值響應波長與據薛定諤方程得到峰值波長誤差為15.6%, 4.6%.結果錶明:引起量子阱中子帶間距離逐漸擴大與峰值響應波長藍移的根本原因是勢壘高度的增加.高分辨透射掃描電鏡實驗結果錶明量子阱材料生長過程精度控製不夠及AlGaAs與GaAs晶格不匹配是造成1#樣品誤差較大的主要原因.說明調節勢壘高度可實現QWIP峰值波長微調的目的.
위료학정속박태도준속박태공작모식QWIP향응파장여세루고도관계,채용금속유궤물화학기상침적법생장제비세루고도불동GaAs/AlxGa1-xAs QWIP양품,채용부리협광보의대양품진행77 K액담온도광보측시.결과현시1#,2#양품봉치향응파장여거설정악방정득도봉치파장오차위15.6%, 4.6%.결과표명:인기양자정중자대간거리축점확대여봉치향응파장람이적근본원인시세루고도적증가.고분변투사소묘전경실험결과표명양자정재료생장과정정도공제불구급AlGaAs여GaAs정격불필배시조성1#양품오차교대적주요원인.설명조절세루고도가실현QWIP봉치파장미조적목적.
A comprehensive analysis on the relationship between the barrier height and the peak wavelength of bound-to-quasi-continuum Quantum Well Infrared Photodetector (QWIP) was demonstrated, together with its effect on characterization of microstructure and macroscopic optic properties of the device-sample. The GaAs/AlxGa1-xAs infrared quantum well material was produced via the method of Metal Organic Chemical Vapor Deposition(MOVCD). Two sample devices with different Al content(0.23 and 0.32) was designed respectively and their corresponding spectral responses were measured via Fourier Transform Spectrometer at the temperature of 77 K. The experimental results shown that sample 1# and 2# are with the peak wavelengths of 8.36 μm and 7.58 μm, which present obvious difference to the theoretical results based on Schrodinger equation (9.672μm and 7.928μm, corresponding to errors of 15.6% and 4.6%, respectively). By analyzing the effect of Al atoms diffusion length, it is found that the decrease of Al content is the key effect which leads to sub-band narrow down and peak wavelength red shift. Meanwhile, by using the method of High Resolution Transmission Electron Microscopy(HRTEM), it is found that the strong error of sample 1# is mainly due to the crystal lattice mismatch between GaAs and AlGaAs, together with the unsatisfied precise control during the growth of quantum well material. Above analysis demonstrates that adjusting the Al content of barrier height is an effective method to turn the peak wavelength of QWIP.