CAJ | 학술논문

基于场效应晶体管(FET)结构的光电探测器能通过栅压抑制噪声信号并具有光电信号放大的功能.有机半导体材料已经被广泛应用到光敏晶体管中,全有机探测器对于实现大面积器件制备、降低成本及柔性器件具有十分重大的意义.然而,多层有机聚合物的成膜,必须避免在溶液制备过程中的"溶剂腐蚀"问题.实验中,采用顶栅底接触(TGBC)FET结构及正交溶剂(orthogonal solvent)的方法,以乙酸丁酯作为聚(甲基丙烯酸甲酯)(PMMA)的溶剂,避免对聚(3-己基噻吩)(P3HT)有源层的破坏,成功制备了性能优良的全有机光电探测器Au(源漏极)/P3HT(150 nm)/PMMA(800 nm)/Al(栅极),其"开/关"电流比达到103,迁移率达8×10-3 cm2·V-1·s-1.该器件对350~650 nm的光照均有响应,在0.1 mW/cm2光照下其"明/暗"电流比达75.在600 nm光照下,其最大响应度达到0.28 A/W,其响应度变化趋势与P3HT的吸收光谱情况相似.
기우장효응정체관(FET)결구적광전탐측기능통과책압억제조성신호병구유광전신호방대적공능.유궤반도체재료이경피엄범응용도광민정체관중,전유궤탐측기대우실현대면적기건제비、강저성본급유성기건구유십분중대적의의.연이,다층유궤취합물적성막,필수피면재용액제비과정중적"용제부식"문제.실험중,채용정책저접촉(TGBC)FET결구급정교용제(orthogonal solvent)적방법,이을산정지작위취(갑기병희산갑지)(PMMA)적용제,피면대취(3-기기새분)(P3HT)유원층적파배,성공제비료성능우량적전유궤광전탐측기Au(원루겁)/P3HT(150 nm)/PMMA(800 nm)/Al(책겁),기"개/관"전류비체도103,천이솔체8×10-3 cm2·V-1·s-1.해기건대350~650 nm적광조균유향응,재0.1 mW/cm2광조하기"명/암"전류비체75.재600 nm광조하,기최대향응도체도0.28 A/W,기향응도변화추세여P3HT적흡수광보정황상사.
The noise signals can be compressed and the optoelectronic signals can be amplified by the applied gate voltages in field-effect transistor (FET)-based photodetector. Organic materials have been widely applied in phototransistors, it is meaningful to fabricate all-organic photodetectors for large area, low cost and flexible device applications. However, multiple polymer layers are usually fabricated through solution processing and the 'solution corrosion' should be avoided during its fabrication process. Therefore, top-gate-bottom-contact(TGBC) FET configuration and orthogonal solvent were adopted in the experiments, and the bulty acetate was used as the solvent of poly (methyl methacrylate) (PMMA) to prevent destroying the poly (3-hexylthiophene) (P3HT) active layer. In this way, the FET-based all-organic photodetectors Au(Source, Drain)/P3HT(150 nm)/PMMA(800 nm)/Al(Gate) had been successfullyprepared, showing an on-off current ratio of 103 and a maximum mobility of 8 ×10-3 cm2?V-1?s-1. The photocurrent shown an obvious increment under illumination of a broad range of incident wavelengths from 350 nm to 650 nm, giving a maximum photo-to-dark current ratio of 75 under 0.1 mW/cm2 illumination. The largest photoresponsivity of ~0.28 A/W was obtained under the illumination of 600 nm, and the trend of photoresponsivity corresponds to that of the absorption of P3HT film.