红外技术
紅外技術
홍외기술
Infrared Technology
2015年
10期
858-863
,共6页
分子束外延%碲镉汞%As掺杂%退火%杂质激活
分子束外延%碲鎘汞%As摻雜%退火%雜質激活
분자속외연%제력홍%As참잡%퇴화%잡질격활
MBE%Hg1-xCdxTe%As-doping%annealing%impurity activation
Ⅴ族元素 As 在碲镉汞中具有较小的扩散系数，在非本征 p 型掺杂中得到广泛应用，在 p-on-n型高性能探测器及双色或多色探测器应用方面优势明显。对分子束外延掺 As 碲镉汞薄膜的几种生长技术的基本原理进行了简单介绍，并对各方法存在的优缺点进行了对比分析；同时对 As 杂质在碲镉汞材料中的掺杂形态、杂质激活退火工艺及杂质激活率等进行了总结分析。对 MBE As 掺杂在第三代多层膜结构器件的应用方面提出了建议。
Ⅴ族元素 As 在碲鎘汞中具有較小的擴散繫數，在非本徵 p 型摻雜中得到廣汎應用，在 p-on-n型高性能探測器及雙色或多色探測器應用方麵優勢明顯。對分子束外延摻 As 碲鎘汞薄膜的幾種生長技術的基本原理進行瞭簡單介紹，併對各方法存在的優缺點進行瞭對比分析；同時對 As 雜質在碲鎘汞材料中的摻雜形態、雜質激活退火工藝及雜質激活率等進行瞭總結分析。對 MBE As 摻雜在第三代多層膜結構器件的應用方麵提齣瞭建議。
Ⅴ족원소 As 재제력홍중구유교소적확산계수，재비본정 p 형참잡중득도엄범응용，재 p-on-n형고성능탐측기급쌍색혹다색탐측기응용방면우세명현。대분자속외연참 As 제력홍박막적궤충생장기술적기본원리진행료간단개소，병대각방법존재적우결점진행료대비분석；동시대 As 잡질재제력홍재료중적참잡형태、잡질격활퇴화공예급잡질격활솔등진행료총결분석。대 MBE As 참잡재제삼대다층막결구기건적응용방면제출료건의。
The group V element arsenic is applied widely in extrinsic p-type doping HgCdTe for its low diffusion coefficient, and it has obvious superiority on the application of p-on-n high performance detectors and dual-band or multi-band detectors. This paper introduced the basic theory of As-doped HgCdTe thin film growth techniques by MBE, as well as the advantages and disadvantages of each were compared. It also analyzed the impurity doping form, the annealing technique of impurity activation and the activation rate. The suggestion has been proposed, which is about application in the third generation device that demonstrates a multilayer with As-doped by MBE.
