CAJ | 학술논문

在化学气相沉积（CVD）生长半导体薄膜过程中，反应前体的浓度测量对于了解反应机理至关重要。紫外-可见吸收光谱和红外光谱是测量半导体薄膜CVD生长中分子浓度的主要工具，特别是可以实现气体浓度的原位测量。本文介绍了CVD中紫外-可见吸收光谱的测量系统，以及它们在测量Ⅲ～Ⅴ族气体浓度和确定在不同条件下化学反应路径中的应用。包括常见金属有机物等气体的吸收特征，紫外-可见吸收光谱在不同温度和压力下CVD过程中InN、GaN薄膜生长中的应用。本文也介绍了红外光谱分析方法在CVD中的应用，包括不同条件下TMG和NH3气相反应机理的分析、SiC薄膜的元素成分分析以及GaN薄膜的气相反应速率的确定。
재화학기상침적（CVD）생장반도체박막과정중，반응전체적농도측량대우료해반응궤리지관중요。자외-가견흡수광보화홍외광보시측량반도체박막CVD생장중분자농도적주요공구，특별시가이실현기체농도적원위측량。본문개소료CVD중자외-가견흡수광보적측량계통，이급타문재측량Ⅲ～Ⅴ족기체농도화학정재불동조건하화학반응로경중적응용。포괄상견금속유궤물등기체적흡수특정，자외-가견흡수광보재불동온도화압력하CVD과정중InN、GaN박막생장중적응용。본문야개소료홍외광보분석방법재CVD중적응용，포괄불동조건하TMG화NH3기상반응궤리적분석、SiC박막적원소성분분석이급GaN박막적기상반응속솔적학정。
In the chemical vapor deposition (CVD) of the compound semiconductor thin film process, measurement of gas concentrations is crucial to the understanding of reaction mechanism. UV-visible absorption spectrum (UVAS) and infrared spectrum (IR) are the main methods to measure gas concentrations,and used forin situ measurement of gas concentrations. CVD measurements system of UVAS and its applications on measuring concentrations of groupⅢ—Ⅴ gases are introduced, including absorption characteristics of metal organic materials etc. and applications of UVAS on mechanism of InN and GaN growth processes at different temperatures and pressures. Finally, applications of IR spectrum is introduced,including analysis of gas-phase reaction between TMG and NH3 under different conditions,analysis of SiC thin film compositions,and determinination of gas phase reaction rate for GaN growth process.