CAJ | 학술논문

本文利用磁控溅射和光刻技术，制备纳米晶Cu薄膜／光刻胶／SiO2／Si复合材料；使用纳米压痕仪对纳米晶Cu薄膜（厚度约50 nm）进行压痕接触变形，结合发展的薄膜转移技术，将纳米晶Cu薄膜压痕区域直接转移到透射电镜（ transmission electron microscope，TEM）铜网上对纳米晶Cu薄膜压痕区域进行变形机制研究。结果表明：在＜40nm的晶粒内，形变孪晶是薄膜与压头接触变形的主要途径，通过TEM观察发现形变孪晶是通过晶界发出的不全位错而形成，同时晶粒形状发生变化；发现晶粒内部出现由三个不全位错形成的非共格孪晶现象，共格孪晶部分出现‘台阶’，位错与孪晶发生交互作用。
본문이용자공천사화광각기술，제비납미정Cu박막／광각효／SiO2／Si복합재료；사용납미압흔의대납미정Cu박막（후도약50 nm）진행압흔접촉변형，결합발전적박막전이기술，장납미정Cu박막압흔구역직접전이도투사전경（ transmission electron microscope，TEM）동망상대납미정Cu박막압흔구역진행변형궤제연구。결과표명：재＜40nm적정립내，형변련정시박막여압두접촉변형적주요도경，통과TEM관찰발현형변련정시통과정계발출적불전위착이형성，동시정립형상발생변화；발현정립내부출현유삼개불전위착형성적비공격련정현상，공격련정부분출현‘태계’，위착여련정발생교호작용。
In this paper, magnetron sputtering and Lithography technology were used to fabricate the “Cu/photoresist/ SiO2/Si”structure. Indentation deformation was conducted on Cu nanocrystalline thin film ( approximately 50nm) with indenter. Using the developed thin film in?situ transmission technology, the thin film with indentation area could be directly transformed onto the copper grid for in?situ transmission electronic microscope research ( TEM ) . The deforming mechanism of nanocrystalline Cu thin film in indentation area was observed by high resolution electronic microscope ( HRTEM ) . The results showed that deformation twinning constituted the main deformation mode in the grains ( <40nm). TEM results presented that twinning could be formed by the emission of partial dislocations from grain boundary, which could change the shape of grain. On the other hand, the self?multiplication of partial dislocation in the grain could also form the deformation twinning on the twinning plane under local stress.