CAJ | 학술논문

主要进行了6英寸（152.4 mm）高均匀性P型硅外延片的生产工艺研究。利用 PE-2061S型桶式外延炉，在重掺硼的硅衬底上化学气相沉积P/P+型硅外延层。通过流场调节工艺、基座包硅工艺、变流量解吸工艺、两步生长工艺等关键工艺的改进，对非主动掺杂效应进行了有效抑制，利用FTIR（傅里叶变换红外线光谱分析）、C-V（电容-电压测试）、SRP（扩展电阻技术）等测试方法对外延层的电学参数以及过渡区形貌进行了测试，得到结晶质量良好、厚度不均匀性<1%、电阻率不均匀性<1.5%的6英寸P型高均匀性硅外延片，各项参数均可以达到器件的使用要求。
주요진행료6영촌（152.4 mm）고균균성P형규외연편적생산공예연구。이용 PE-2061S형통식외연로，재중참붕적규츤저상화학기상침적P/P+형규외연층。통과류장조절공예、기좌포규공예、변류량해흡공예、량보생장공예등관건공예적개진，대비주동참잡효응진행료유효억제，이용FTIR（부리협변환홍외선광보분석）、C-V（전용-전압측시）、SRP（확전전조기술）등측시방법대외연층적전학삼수이급과도구형모진행료측시，득도결정질량량호、후도불균균성<1%、전조솔불균균성<1.5%적6영촌P형고균균성규외연편，각항삼수균가이체도기건적사용요구。
The paper mainly describes a kind of practical production process with the 6-inch silicon epitaxial wafers with high uniformity. Using the PE-2061S barrel-type epitaxial furnace, required 6-inch P/P+-type silicon epitaxial layer was prepared on the heavily B-doped silicon substrate by chemical vapor deposition. The key processes such as the flow field adjusting process, the susceptor coating with silicon process, variable flow rate process and the two-step growth process were effectively improved. The electricity parameter as well as the transition region morphology of the epitaxial layer was analyzed by using some testing methods such as FTIR(Fourier-Transform Infrared Spectrophotometry), C-V, SRP(spreading resistance proifle)and so on. Finally, P/P+-type silicon epitaxial wafers were successfully prepared, and all the parameters were adapted to the design requirements of devices, such as good crystallization quality, the thickness nonuniformity <1%, the resistivity nonuniformity <1.5%.