A novel single event upset reversal in 40-nm bulk CMOS 6 T SRAM cells
  • 万方数据
    核技术（英文版） 핵기술（영문판）
    Nuclear Science and Techniques
    2015年 5期 050405-1-050405-7 ,共1页

    李鹏%张民选%赵振宇%邓全

    리붕%장민선%조진우%산전



    Radiation environment%6 T SRAM cell%Charge collection%Charge sharing%Single event upset reversal (SEUR)%Single event transient (SET)


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