CAJ | 학술논문

本文利用尖端集电原理,在射频平衡磁控溅射过程中通过施加衬底偏压沉积了Cu2 O薄膜. 然后用原子力显微镜和掠入射X射线衍射仪对薄膜样品的形貌和结构进行表征. 研究结果表明,不管施加的是正偏压还是负偏压,所制备 Cu2 O 薄膜的形貌和结构相差不大,均呈现出疏松多孔和(111)择优取向的特点. 进一步地,从尖端集电的角度对平衡磁控溅射沉积过程中的偏压效应进行了合理解释.
본문이용첨단집전원리,재사빈평형자공천사과정중통과시가츤저편압침적료Cu2 O박막. 연후용원자력현미경화략입사X사선연사의대박막양품적형모화결구진행표정. 연구결과표명,불관시가적시정편압환시부편압,소제비 Cu2 O 박막적형모화결구상차불대,균정현출소송다공화(111)택우취향적특점. 진일보지,종첨단집전적각도대평형자공천사침적과정중적편압효응진행료합리해석.
Based on the tip charging principle,in this paper Cu2 O thin films were deposited in a radio-frequen-cy balanced magnetron sputtering system by applying substrate bias voltage. Then atomic force microscopy and grazing incidence X-ray diffraction were carried out for the morphological and structural characterizations. It was found that as-deposited Cu2 O thin films typically showed a porous structure and a preferred orientation of (111). Further,from the perspective of tip charging effect a proper explanation was applied for the bias voltage effect during balanced magnetron sputtering deposition.