CAJ | 학술논문

采用偏置靶材离子束沉积工艺，在相同的沉积参数条件下，在硅、玻璃以及蓝宝石三种不同的衬底上分别制备了相同厚度的纯硅和纯锗薄膜。利用原子力显微镜，研究了两种非晶薄膜在不同衬底上的二维、三维表面形貌和表面粗糙度。结果表明：纯锗薄膜具有较大的均方根粗糙度，均达到了8 nm以上，其中沉积在硅衬底上的纯锗薄膜的均方根粗糙度最大，达到了11.16 nm；而纯硅薄膜的均方根粗糙度较小，均在3 nm以下，其中沉积在硅衬底上的纯硅薄膜的均方根粗糙度最小，仅有0.47 nm。
채용편치파재리자속침적공예，재상동적침적삼수조건하，재규、파리이급람보석삼충불동적츤저상분별제비료상동후도적순규화순타박막。이용원자력현미경，연구료량충비정박막재불동츤저상적이유、삼유표면형모화표면조조도。결과표명：순타박막구유교대적균방근조조도，균체도료8 nm이상，기중침적재규츤저상적순타박막적균방근조조도최대，체도료11.16 nm；이순규박막적균방근조조도교소，균재3 nm이하，기중침적재규츤저상적순규박막적균방근조조도최소，부유0.47 nm。
Both of pure silicon (Si) and germanium (Ge) thin films were prepared on three different substrates, including silicon, glass and sapphire, by biased target ion beam deposition ( BTIBD) method with same deposition parameters and a nominal thickness. Atomic force microscopy (AFM) was used to measure the two dimensional surface topography, three dimensional surface topography and surface roughness of Si and Ge thin films deposited on different substrates. The results indicate that pure Ge thin films present a ralatively larger root mean square (RMS) roughness, which is larger than 8 nm and the largest value is 11.16 nm in the case of silicon substrate. However, the pure Si thin films reveal a relatively smaller RMS roughness, which is less than 3 nm and the smallest value is only 0.47 nm in the case of silicon substrate.