CAJ | 학술논문

采用电化学刻蚀法在P型硅中制备多孔阵列结构。通过实验研究和理论分析，分别讨论硅片电阻率、电流密度、电解液组分对多孔硅形貌的影响。结果表明，在P型硅中电阻率决定了孔洞能否形成；改变电流密度，可以有效调控孔径大小；在电阻率30~50Ω·cm、电流密度20×10–3A/cm2的条件下，可以得到最优化多孔硅结构。通过模板引导法制备了高度有序的多孔硅阵列，孔径2.5μm，周期4μm。在电解液中添加十六烷基三甲基氯化铵（CTAC），反应生成的气泡更容易逸出，有利于改善多孔硅阵列形貌。研究成果为基于硅孔洞填充的像素化X射线闪烁转换屏的研制提供了必要的基础。
채용전화학각식법재P형규중제비다공진렬결구。통과실험연구화이론분석，분별토론규편전조솔、전류밀도、전해액조분대다공규형모적영향。결과표명，재P형규중전조솔결정료공동능부형성；개변전류밀도，가이유효조공공경대소；재전조솔30~50Ω·cm、전류밀도20×10–3A/cm2적조건하，가이득도최우화다공규결구。통과모판인도법제비료고도유서적다공규진렬，공경2.5μm，주기4μm。재전해액중첨가십륙완기삼갑기록화안（CTAC），반응생성적기포경용역일출，유리우개선다공규진렬형모。연구성과위기우규공동전충적상소화X사선섬삭전환병적연제제공료필요적기출。
Pore array was fabricated in P-type silicon wafers by electrochemical etching. By experimental research and theoretical analysis, influences of silicon resistivity, current density and electrolyte addition on pore formation were discussed. Results show that resistivity of P-type silicon is decisive in pore formation and pore diameter can be modulated by varied current density; silicon wafers with a resistivity of 30–50Ω·cm are optimal for pore formation with the current density being at 20×10–3A/cm2. With assistance of pattern guiding, ordered silicon pore arrays with uniform size are obtained. The pore diameter is 2.5μm and the periodic pitch is 4μm. Addition of Cetyltrimethylammonium Chloride (CTAC) into the electrolyte facilitates bubbles escaping and improves porous silicon morphologies. This research provides a valuable support for developing pixellated X-ray scintillation screen with high resolution.