CAJ | 학술논문

以铝掺杂氧化锌（ ZnO：Al）陶瓷靶作为溅射材料，采用RF磁控溅射技术，在玻璃衬底上制备了ZnO：Al半导体薄膜，通过X射线衍射（ XRD）测试研究了衬底温度对ZnO：Al薄膜生长特性及其微结构性能的影响。研究表明：衬底温度对薄膜生长和微结构均具有明显的影响；随着衬底温度的升高，薄膜（002）晶面取向度和平均晶粒尺寸表现为先增大后减小的变化趋势，而半高宽、微应变和位错密度则呈现出先减小后增大的变化趋势。当衬底温度为650 K时，ZnO：Al薄膜具有最高的（002）晶面取向度、最大的晶粒尺寸、最窄的半高宽、最低的微应变、最小的位错密度，其结晶性能和微结构性能最佳。
이려참잡양화자（ ZnO：Al）도자파작위천사재료，채용RF자공천사기술，재파리츤저상제비료ZnO：Al반도체박막，통과X사선연사（ XRD）측시연구료츤저온도대ZnO：Al박막생장특성급기미결구성능적영향。연구표명：츤저온도대박막생장화미결구균구유명현적영향；수착츤저온도적승고，박막（002）정면취향도화평균정립척촌표현위선증대후감소적변화추세，이반고관、미응변화위착밀도칙정현출선감소후증대적변화추세。당츤저온도위650 K시，ZnO：Al박막구유최고적（002）정면취향도、최대적정립척촌、최착적반고관、최저적미응변、최소적위착밀도，기결정성능화미결구성능최가。
The thin films of Al doped ZnO ( ZnO:Al ) were prepared on glass substrates by RF magnetron sputtering method using a sintered ceramic target with a mixture of Al 2 O3 and ZnO.The influence of substrate temperature on the growth and mirostructural properties of ZnO:Al thin films was studied by X-ray diffraction ( XRD ) measurement .The results show that the deposited thin films with the hexagonal crystal structure are polycrystalline and have a strongly preferred orientation of (002) plane.The growth and mirostructural properties of the thin films are closely related to the substrate temperature.As the substrate temperature increases, the preferred orientation of (002) plane (P(002) ) and average grain size ( L) firstly increase and then decrease , while the full widths at half maximum (β) , micro strain (ε) and dislocation density (δ) exhibit the reverse variation trend .The ZnO:Al thin film deposited at the substrate temperature of 650 K possesses the best crystallite quality and microstructural properties , with the highest P(002) , the largest L, the smallest β, the lowest ε and the minimum δ.