CAJ | 학술논문

采用高真空直流磁控溅射的方法制备了结构为//Ta(5 nm)/Co75 Fe25(5 nm)/Ir20 Mn80(12 nm)/Ta(8 nm)双层膜，通过 X 射线衍射(XRD)、原子力显微镜(AFM)和振动样品磁强计(VSM)等分析测试手段，研究了低剂量 Ga＋离子辐照对双层膜结构和磁性能的影响；通过样品在反向饱和场下停留时间研究了低剂量 Ga＋离子辐照对双层膜的磁稳定性的影响；并利用 SRIM2003软件模拟分析了离子辐照后 Ga 元素在 IrMn 层中的深度分布。结果表明，低剂量 Ga＋离子辐照对双层膜中反铁磁层 IrMn 的〈111〉方向织构影响甚微；而双层膜的交换偏置场以及界面粗糙度随着 Ga＋离子辐照剂量的增大而减小；低剂量 Ga＋离子辐照后双层膜磁稳定性降低。
채용고진공직류자공천사적방법제비료결구위//Ta(5 nm)/Co75 Fe25(5 nm)/Ir20 Mn80(12 nm)/Ta(8 nm)쌍층막，통과 X 사선연사(XRD)、원자력현미경(AFM)화진동양품자강계(VSM)등분석측시수단，연구료저제량 Ga＋리자복조대쌍층막결구화자성능적영향；통과양품재반향포화장하정류시간연구료저제량 Ga＋리자복조대쌍층막적자은정성적영향；병이용 SRIM2003연건모의분석료리자복조후 Ga 원소재 IrMn 층중적심도분포。결과표명，저제량 Ga＋리자복조대쌍층막중반철자층 IrMn 적〈111〉방향직구영향심미；이쌍층막적교환편치장이급계면조조도수착 Ga＋리자복조제량적증대이감소；저제량 Ga＋리자복조후쌍층막자은정성강저。
The CoFe/IrMn bilayer was deposited by high vacuum magnetron sputtering on a silicon wafer sub-strate.The influences of low dose Ga+ ion irradiation on microstructure and magnetic properties were investiga-ted by X-ray diffraction (XRD),atomic force microscopy (AFM)and vibrating sample magnetometry (VSM). And the magnetic stability of both non-irradiated and irradiated CoFe/IrMn bilayers has been investigated by means of holding the film in a negative saturation field.The distribution of Ga+ ion in the IrMn layer obtained by the stopping and ranges of ions in matter (SRIM)simulation.The results show that the texture of IrMn (1 1 1)of the ion irradiated bilayer is the same as the non-irradiated ones.The exchange bias and the surface/in-terface roughness decreases with increasing ion doses.Furthermore,the magnetic stability decreases after ion ir-radiation.