光谱学与光谱分析
光譜學與光譜分析
광보학여광보분석
Spectroscopy and Spectral Analysis
2015年
11期
3007-3011
,共5页
高气压微波等离子体%CVD金刚石膜%发射光谱%拉曼光谱%均匀性
高氣壓微波等離子體%CVD金剛石膜%髮射光譜%拉曼光譜%均勻性
고기압미파등리자체%CVD금강석막%발사광보%랍만광보%균균성
High-pressure microwave plasma%CVD diamond films%Optical emission spectroscopy%Raman spectroscopy%Uni-formity
采用微波等离子体化学气相沉积方法（microwave plasma chemical vapor deposition ，MPCVD）在高沉积气压（34.5 kPa）下制备多晶金刚石，利用发射光谱（optical emission spectroscopy ，OES）在线诊断了CH4／H2／O2等离子体内基团的谱线强度及其空间分布，并利用拉曼（Raman）光谱评价了不同O2体积分数下沉积出的金刚石膜质量，研究了金刚石膜质量的均匀性分布问题。结果表明：随着O2体积分数的增加， C2，C H及 Hα基团的谱线强度均呈下降的趋势，而C2，C H与 Hα谱线强度比值也随之下降，表明增加O2体积分数不仅导致等离子体中碳源基团的绝对浓度下降，而且碳源基团相对于氢原子的相对浓度也降低，使得金刚石的沉积速率下降而沉积质量提高。此外，具有刻蚀作用的O H基团的谱线强度却随着O2体积分数的增加而上升，这也有利于降低金刚石膜中非晶碳的含量。光谱空间诊断发现高沉积气压下等离子体内基团分布不均匀，特别是中心区域C2基团聚集造成该区域内非晶碳含量增加，最终导致金刚石膜质量分布的不均匀。
採用微波等離子體化學氣相沉積方法（microwave plasma chemical vapor deposition ，MPCVD）在高沉積氣壓（34.5 kPa）下製備多晶金剛石，利用髮射光譜（optical emission spectroscopy ，OES）在線診斷瞭CH4／H2／O2等離子體內基糰的譜線彊度及其空間分佈，併利用拉曼（Raman）光譜評價瞭不同O2體積分數下沉積齣的金剛石膜質量，研究瞭金剛石膜質量的均勻性分佈問題。結果錶明：隨著O2體積分數的增加， C2，C H及 Hα基糰的譜線彊度均呈下降的趨勢，而C2，C H與 Hα譜線彊度比值也隨之下降，錶明增加O2體積分數不僅導緻等離子體中碳源基糰的絕對濃度下降，而且碳源基糰相對于氫原子的相對濃度也降低，使得金剛石的沉積速率下降而沉積質量提高。此外，具有刻蝕作用的O H基糰的譜線彊度卻隨著O2體積分數的增加而上升，這也有利于降低金剛石膜中非晶碳的含量。光譜空間診斷髮現高沉積氣壓下等離子體內基糰分佈不均勻，特彆是中心區域C2基糰聚集造成該區域內非晶碳含量增加，最終導緻金剛石膜質量分佈的不均勻。
채용미파등리자체화학기상침적방법（microwave plasma chemical vapor deposition ，MPCVD）재고침적기압（34.5 kPa）하제비다정금강석，이용발사광보（optical emission spectroscopy ，OES）재선진단료CH4／H2／O2등리자체내기단적보선강도급기공간분포，병이용랍만（Raman）광보평개료불동O2체적분수하침적출적금강석막질량，연구료금강석막질량적균균성분포문제。결과표명：수착O2체적분수적증가， C2，C H급 Hα기단적보선강도균정하강적추세，이C2，C H여 Hα보선강도비치야수지하강，표명증가O2체적분수불부도치등리자체중탄원기단적절대농도하강，이차탄원기단상대우경원자적상대농도야강저，사득금강석적침적속솔하강이침적질량제고。차외，구유각식작용적O H기단적보선강도각수착O2체적분수적증가이상승，저야유리우강저금강석막중비정탄적함량。광보공간진단발현고침적기압하등리자체내기단분포불균균，특별시중심구역C2기단취집조성해구역내비정탄함량증가，최종도치금강석막질량분포적불균균。
Polycrystalline diamond growth by microwave plasma chemical vapor deposition (MPCVD) at high‐pressure (34.5 kPa) was investigated .The CH4/H2/O2 plasma was detected online by optical emission spectroscopy (OES) ,and the spatial distribution of radicals in the CH4/H2/O2 plasma was studied .Raman spectroscopy was employed to analyze the properties of the diamond films deposited in different oxygen volume fraction .The uniformity of diamond films quality was researched .The results indicate that the spectrum intensities of C2 ,CH and Hαdecrease with the oxygen volume fraction increasing .While the intensity ratios of C2 ,CH to Hαalso reduced as a function of increasing oxygen volume fraction .It is shown that the decrease of the absolute concentration of carbon radicals is attributed to the rise volume fraction of oxygen ,while the relative concentration of carbon radicals to hydrogen atom is also reducing ,which depressing the growth rate but improving the quality of diamond film .Furthermore ,the OH radicals ,role of etching ,its intensities increase with the increase of oxygen volume fraction .Indica‐ted that the improvement of OH concentration is also beneficial to reduce the content of amorphous carbon in diamond films .The spectrum space diagnosis results show that under high deposition pressure the distribution of the radicals in the CH4/H2/O2 plasma is inhomogeneous ,especially ,that of radical C2 gathered in the central region .And causing a rapid increase of non‐dia‐mond components in the central area ,eventually enable the uneven distribution of diamond films quality .
