CAJ | 학술논문

考察了通过自主研发的高温热裂解辅助硒化装置所产生的高活性硒对CIGS薄膜结构和器件性能的影响. 通过调节高温裂解系统的温度可以有效调节不同的硒活性. 研究发现,第一台阶HC-Se气氛可以提高CIGS薄膜表面的Ga含量,使得CIGS薄膜内的Ga分布更加平缓,进而提高CIGS薄膜表面禁带宽度. 而且HC-Se气氛可以消除CIGS"两相分离"现象. 两种因素的共同作用使得CIGS薄膜太阳电池的开路电压提高了34. 6%. 电池转换效率从6. 02%提升至8. 76%,增长了45. 5%.
고찰료통과자주연발적고온열렬해보조서화장치소산생적고활성서대CIGS박막결구화기건성능적영향. 통과조절고온렬해계통적온도가이유효조절불동적서활성. 연구발현,제일태계HC-Se기분가이제고CIGS박막표면적Ga함량,사득CIGS박막내적Ga분포경가평완,진이제고CIGS박막표면금대관도. 이차HC-Se기분가이소제CIGS"량상분리"현상. 량충인소적공동작용사득CIGS박막태양전지적개로전압제고료34. 6%. 전지전환효솔종6. 02%제승지8. 76%,증장료45. 5%.
The influence of cracking selenium on the structure and device parameters of Cu(In1-xGax)-Se2 ( CIGS) thin films was investigated. The activity of cracked selenium can be controlled by mod-erating the temperature of thermal cracking system employed in our self-designed selenization fur-nace. The HC-Se atmosphere can enhance the Ga concentration on the film surface and increase the band-gap energy of the CIGS film surface. In addition, HC-Se atmosphere can alleviate the "phase separation". Consequently, Voc value of the solar cell increases about 34. 6%. The device conver-sion efficiency using the novel thermal-cracking system increases by about 45 . 5% from 6 . 02% to 8 . 76%.