发光学报
髮光學報
발광학보
Chinese Journal of Luminescence
2015年
11期
1320-1324
,共5页
a-IGZO薄膜晶体管%磁控溅射法%负电荷层%平带电势%阈值电压
a-IGZO薄膜晶體管%磁控濺射法%負電荷層%平帶電勢%閾值電壓
a-IGZO박막정체관%자공천사법%부전하층%평대전세%역치전압
a-IGZO TFT%MS sputtering%negative charge layer%flat band potential%threshold voltage
采用脉冲直流磁控溅射的方式沉积In-Ga-Zn-O ( IGZO)膜层作为TFT的有源层. 在TFT沟道处的有源层和绝缘层的界面上,通过溅射法制作一定厚度的负电荷层对阈值电压( Vth )进行调制,使得Vth由-3. 8 V升高至-0. 3 V,器件由耗尽型向增强型转变. 通过增加Al2 O3 作为负电荷层,可有效地将Vth控制在0 V附近,并且提高其器件稳定性,得到较好的电学特性:电流开关比Ion/Iof >109 ,亚阈值摆幅SS为0. 2 V/dec,阈值电压Vth为-0. 3 V,迁移率μ为9. 2 cm2/(V·s).
採用脈遲直流磁控濺射的方式沉積In-Ga-Zn-O ( IGZO)膜層作為TFT的有源層. 在TFT溝道處的有源層和絕緣層的界麵上,通過濺射法製作一定厚度的負電荷層對閾值電壓( Vth )進行調製,使得Vth由-3. 8 V升高至-0. 3 V,器件由耗儘型嚮增彊型轉變. 通過增加Al2 O3 作為負電荷層,可有效地將Vth控製在0 V附近,併且提高其器件穩定性,得到較好的電學特性:電流開關比Ion/Iof >109 ,亞閾值襬幅SS為0. 2 V/dec,閾值電壓Vth為-0. 3 V,遷移率μ為9. 2 cm2/(V·s).
채용맥충직류자공천사적방식침적In-Ga-Zn-O ( IGZO)막층작위TFT적유원층. 재TFT구도처적유원층화절연층적계면상,통과천사법제작일정후도적부전하층대역치전압( Vth )진행조제,사득Vth유-3. 8 V승고지-0. 3 V,기건유모진형향증강형전변. 통과증가Al2 O3 작위부전하층,가유효지장Vth공제재0 V부근,병차제고기기건은정성,득도교호적전학특성:전류개관비Ion/Iof >109 ,아역치파폭SS위0. 2 V/dec,역치전압Vth위-0. 3 V,천이솔μ위9. 2 cm2/(V·s).
TFT device with In-Ga-Zn-O ( IGZO ) film as the active layer deposited by pulse DC sputtering was fabricated. An Al2 O3 film which was also deposited by sputtering was sandwiched be-tween the active layer and an insulating layer. The Al2 O3 acted as a negative charge layer for thresh-old voltage modulation (Vth). It raised the Vth from -3. 8 V to -0. 3 V, enhancing the formation of a depletion mode device. The application of Al2 O3 as a negative layer can effectively control Vth around 0 V and enhance the stability of the device. Improved device characteristics such as:on/off current ratio (Ion/Iof ) >109, sub-threshold slope(SS) of 0. 2 V/dec, Vth of -0. 3 V, and mobility (μ) of 9. 2 cm2/(V·s) were therefore achieved.
