CAJ | 학술논문

采用分子束外延( MBE)方法,调节生长温度﹑Ⅴ/Ⅲ束流比等参数在( 001 ) GaAs衬底上生长了InAs/GaInSb超晶格薄膜. 结果表明:InAs/GaInSb超晶格薄膜的最佳生长温度在385~395 ℃,Ⅴ/Ⅲ束流比为5. 7:1~8. 7:1. 高能电子衍射仪(RHEED)原位观测到清晰的GaAs层(4 × 2)﹑GaSb层(1 × 3)和InAs层(1 × 2)再构衍射条纹. 获得的超晶格薄膜结构质量较好. 随着温度的升高,材料的载流子浓度和迁移率均上升.
채용분자속외연( MBE)방법,조절생장온도﹑Ⅴ/Ⅲ속류비등삼수재( 001 ) GaAs츤저상생장료InAs/GaInSb초정격박막. 결과표명:InAs/GaInSb초정격박막적최가생장온도재385~395 ℃,Ⅴ/Ⅲ속류비위5. 7:1~8. 7:1. 고능전자연사의(RHEED)원위관측도청석적GaAs층(4 × 2)﹑GaSb층(1 × 3)화InAs층(1 × 2)재구연사조문. 획득적초정격박막결구질량교호. 수착온도적승고,재료적재류자농도화천이솔균상승.
InAs/GaInSb superlattice material was grown on (001)GaAs substrates by molecular beam epitaxy ( MBE) , adjusting the growth temperature and Ⅴ/Ⅲ beam ratio. The results show that the growth temperature is in the range of 385 ℃ and 395 ℃, the Ⅴ/Ⅲ beam ratio is from 5. 7:1 to 8. 7:1. RHEED situ observations to the GaAs layer (4 × 2),GaSb layer (1 × 3) and InAs layer (1 × 2) show clarity reconstructed diffraction fringes, the quality of superlattice structure is better,and with increasing temperature, the carrier concentration and mobility of the material are increased.