CAJ | 학술논문

利用脉冲激光沉积( PLD)在玻璃衬底上制备了Cu掺杂SnS薄膜. 靶材是由SnS和Cu2 S粉末混合压制而成(Cu和Sn的量比分别为0%﹑2. 5%﹑5%﹑7. 5%和10%). 利用X射线衍射(XRD)﹑拉曼光谱仪(Ra-man)﹑原子力显微镜( AFM)﹑紫外-可见-近红外分光光度计( UV-Vis-NIR)﹑Keithley 4200-SCS半导体参数分析仪研究了Cu掺杂量对SnS薄膜的晶体结构﹑表面形貌﹑光学性质和电学性能的影响. 结果表明:所制备的SnS薄膜样品沿(111)晶面择优取向生长,SnS:5%Cu薄膜的结晶质量最好且具有SnS特征拉曼峰. 随着Cu掺杂量的增大,平均颗粒尺寸逐渐增大. 不同Cu掺杂量的薄膜在可见光范围内的吸收系数均为105 cm-1数量级. SnS:5%Cu薄膜的禁带宽度Eg 为2. 23 eV,光暗电导率比值为2. 59. 同时,在玻璃衬底上制备了p-SnS:Cu/n-ZnS异质结器件,器件在暗态及光照的条件下均有良好的整流特性,并具有较弱的光伏特性.
이용맥충격광침적( PLD)재파리츤저상제비료Cu참잡SnS박막. 파재시유SnS화Cu2 S분말혼합압제이성(Cu화Sn적량비분별위0%﹑2. 5%﹑5%﹑7. 5%화10%). 이용X사선연사(XRD)﹑랍만광보의(Ra-man)﹑원자력현미경( AFM)﹑자외-가견-근홍외분광광도계( UV-Vis-NIR)﹑Keithley 4200-SCS반도체삼수분석의연구료Cu참잡량대SnS박막적정체결구﹑표면형모﹑광학성질화전학성능적영향. 결과표명:소제비적SnS박막양품연(111)정면택우취향생장,SnS:5%Cu박막적결정질량최호차구유SnS특정랍만봉. 수착Cu참잡량적증대,평균과립척촌축점증대. 불동Cu참잡량적박막재가견광범위내적흡수계수균위105 cm-1수량급. SnS:5%Cu박막적금대관도Eg 위2. 23 eV,광암전도솔비치위2. 59. 동시,재파리츤저상제비료p-SnS:Cu/n-ZnS이질결기건,기건재암태급광조적조건하균유량호적정류특성,병구유교약적광복특성.
Cu doped SnS thin films were grown on the glass substrates by pulsed laser deposition. The targets were pressed by the mixture of SnS and Cu2 S powder ( Cu and Sn molar ratios were 0%, 2. 5%, 5%, 7. 5%, and 10%, respectively). The effects of Cu doping content on the microstruc-tural, morphological, optical and electrical properties of SnS thin films were studied by X-ray dif-fraction (XRD), laser Raman spectrometry, atomic force microscopy (AFM), ultraviolet-visible-near infrared spectrophotometer ( UV-Vis-NIR ) , and Keithley 4200-SCS semiconductor parameter analyzer. The results show that the films grow preferentially oriented in (111) plane, and SnS:5%Cu film has the excellent crystalline and Raman characteristic peaks. With the increasing of Cu doping content, the average particle sizes of the films increase. The absorption coefficient of the film in the visible region is the order of 105 cm-1 for different Cu doping content. The direct band gap of SnS:5%Cu film is 2. 23 eV, and the ratio of photo-conductivity to dark-conductivity is 2. 59. Finally, p-SnS:Cu/n-ZnS heterojuction device was fabricated on the glass substrate. The device exhibits good rectifying behaviors in dark and under illumination, and weak photovoltaic properties.