粉末冶金材料科学与工程
粉末冶金材料科學與工程
분말야금재료과학여공정
Materials Science and Engineering of Powder Metallurgy
2015年
5期
725-731
,共7页
凌继容%谭周建%李军%褚胜林%李丙菊%刘学文%廖寄乔
凌繼容%譚週建%李軍%褚勝林%李丙菊%劉學文%廖寄喬
릉계용%담주건%리군%저성림%리병국%류학문%료기교
碳化硅纳米晶须%C/C复合材料%SiCw/SiC涂层%化学气相沉积(CVD)
碳化硅納米晶鬚%C/C複閤材料%SiCw/SiC塗層%化學氣相沉積(CVD)
탄화규납미정수%C/C복합재료%SiCw/SiC도층%화학기상침적(CVD)
silicon carbide nanowires%C/C composite%SiCnw/SiC coating%chemical vapor deposition (CVD)
在中密度 C/C 复合材料基体上采用催化化学气相沉积方法生长碳化硅纳米线(SiCnw)及制备碳化硅纳米线/碳化硅(SiCnw/SiC)涂层,研究中密度C/C复合材料基体上加载催化剂后涂层沉积及其抗氧化性能,结果表明:中密度基体上催化制备SiCnw涂层,可改善沉积效率,同时可抑制裂纹扩展,明显改善SiC涂层在1 200℃的氧化防护能力.另外,在1 500℃的空气中氧化10 h后,SiCnw/SiC涂层氧化质量损失率仅为1.34%,明显低于质量损失率为8.67%的单层SiC涂层.
在中密度 C/C 複閤材料基體上採用催化化學氣相沉積方法生長碳化硅納米線(SiCnw)及製備碳化硅納米線/碳化硅(SiCnw/SiC)塗層,研究中密度C/C複閤材料基體上加載催化劑後塗層沉積及其抗氧化性能,結果錶明:中密度基體上催化製備SiCnw塗層,可改善沉積效率,同時可抑製裂紋擴展,明顯改善SiC塗層在1 200℃的氧化防護能力.另外,在1 500℃的空氣中氧化10 h後,SiCnw/SiC塗層氧化質量損失率僅為1.34%,明顯低于質量損失率為8.67%的單層SiC塗層.
재중밀도 C/C 복합재료기체상채용최화화학기상침적방법생장탄화규납미선(SiCnw)급제비탄화규납미선/탄화규(SiCnw/SiC)도층,연구중밀도C/C복합재료기체상가재최화제후도층침적급기항양화성능,결과표명:중밀도기체상최화제비SiCnw도층,가개선침적효솔,동시가억제렬문확전,명현개선SiC도층재1 200℃적양화방호능력.령외,재1 500℃적공기중양화10 h후,SiCnw/SiC도층양화질량손실솔부위1.34%,명현저우질량손실솔위8.67%적단층SiC도층.
The SiCnw/SiC (Silicon Carbide Nanowires/Silicon Carbide) coating was deposited on the surface of mid-density carbon/carbon composites (C/C composites) by chemical vapor deposition. The coating deposition and its anti-oxidant properties were studied for the C/C composites of mid-density with catalyst (Cat.). The results show that during preparing SiCnw layer in mid-density matrix by Cat., the deposition efficiency is improved, meanwhile, the growth of crack is also restrained. Therefore, the oxidation resistant of SiC coating with SiCnw layer is improved in the air at 1 200℃. Since the mass loss of SiCnw/SiC coating is 1.34%, which is lower than that of SiC coating (8.67%) after oxidation for 10 h at 1 500℃ in air.
