电子工艺技术
電子工藝技術
전자공예기술
Electronics Process Technology
2015年
6期
354-357
,共4页
王云彪%田原%杨召杰%郭亚坤
王雲彪%田原%楊召傑%郭亞坤
왕운표%전원%양소걸%곽아곤
硅单晶片%恒定腐蚀法%损伤层%抛光去除量
硅單晶片%恆定腐蝕法%損傷層%拋光去除量
규단정편%항정부식법%손상층%포광거제량
Silicon wafer%Constant corrosion method%Affected layer%CMP removal amount
硅单晶片是制作集成电路及分立器件的基础材料,随着集成电路不断向小线宽、低成本方向发展,对于硅单晶片的质量水平和成本控制提出了更高的要求。研究表面损伤层与抛光去除量的关系,能够有效控制抛光去除量的大小,对于提高抛光片表面质量、控制生产成本、优化工艺条件具有重要的意义。通过恒定腐蚀法与化学机械抛光法相结合的方式分析了损伤层深度与去除量的关系,研究发现研磨片、碱腐蚀片和酸腐蚀片的表面损伤层深度依次降低,但均小于抛光去除量,依据损伤层模型,提出了抛光去除量取决于腐蚀后表面晶胞状况的观点。
硅單晶片是製作集成電路及分立器件的基礎材料,隨著集成電路不斷嚮小線寬、低成本方嚮髮展,對于硅單晶片的質量水平和成本控製提齣瞭更高的要求。研究錶麵損傷層與拋光去除量的關繫,能夠有效控製拋光去除量的大小,對于提高拋光片錶麵質量、控製生產成本、優化工藝條件具有重要的意義。通過恆定腐蝕法與化學機械拋光法相結閤的方式分析瞭損傷層深度與去除量的關繫,研究髮現研磨片、堿腐蝕片和痠腐蝕片的錶麵損傷層深度依次降低,但均小于拋光去除量,依據損傷層模型,提齣瞭拋光去除量取決于腐蝕後錶麵晶胞狀況的觀點。
규단정편시제작집성전로급분립기건적기출재료,수착집성전로불단향소선관、저성본방향발전,대우규단정편적질량수평화성본공제제출료경고적요구。연구표면손상층여포광거제량적관계,능구유효공제포광거제량적대소,대우제고포광편표면질량、공제생산성본、우화공예조건구유중요적의의。통과항정부식법여화학궤계포광법상결합적방식분석료손상층심도여거제량적관계,연구발현연마편、감부식편화산부식편적표면손상층심도의차강저,단균소우포광거제량,의거손상층모형,제출료포광거제량취결우부식후표면정포상황적관점。
Silicon wafer is basic material for fabricating IC devices and discrete devices. With IC technology developed into small critical size and low cost, the quality and cost of silicon wafers should be strictly controlled. In order to control the polished thickness during wafers’ CMP (Chemical Mechanical Polishing) process, the influence of wafer affected layer to CMP process should be studied. And this may be of great significance in increasing surfaces quality, optimizing fabrication process and controlling production cost. Relationship between affected layer thickness of un-polished wafer and removal amount during CMP process was discussed. It was found that for the lapping wafers, the alkali-corroded wafers and the acid-corroded wafers, the affected layer thickness decreased in turn, but they were all smaller than the CMP removal amount. According to the affected layer model, the standpoint that the CMP removal amount depend on the crystal cells of polished wafer surfaces was brought forward.