CAJ | 학술논문

对不同偏置下的PNP 输入双极运算放大器在3、10 MeV 两种质子能量下的辐照效应进行了研究,并将质子辐射损伤效应与0.5 Gy(Si)/s剂量率60 Coγ射线辐射损伤效应进行了比较,以探究质子和γ射线产生的辐射损伤之间的对应关系。结果表明,运放 LM837对γ射线的敏感程度较10 MeV 质子和3 MeV质子的小,然而其室温退火后的后损伤效应却更严重；相同等效总剂量条件下,10 MeV 质子造成的损伤较3 MeV质子的高；质子辐射中器件的偏置条件对损伤影响不大。
대불동편치하적PNP 수입쌍겁운산방대기재3、10 MeV 량충질자능량하적복조효응진행료연구,병장질자복사손상효응여0.5 Gy(Si)/s제량솔60 Coγ사선복사손상효응진행료비교,이탐구질자화γ사선산생적복사손상지간적대응관계。결과표명,운방 LM837대γ사선적민감정도교10 MeV 질자화3 MeV질자적소,연이기실온퇴화후적후손상효응각경엄중；상동등효총제량조건하,10 MeV 질자조성적손상교3 MeV질자적고；질자복사중기건적편치조건대손상영향불대。
The PNP input bipolar operational amplifiers were irradiated with 60 Co γrays,3 MeV protons and 10 MeV protons respectively at different biases to determine the correlation of the radiation damage induced byγrays and protons.The comparison of protons with 60 Coγrays shows that the proton radiation can induce both displacement and ionization damage,and 1 0 MeV protons can induce more damage than 3 MeV pro-tons under the same absorbed dose.The biases have little effect on the proton radiation damage.