CAJ | 학술논문

三氧化钨是一种 n 型半导体，它的禁带宽度在2．5－3．5 eV 之间，是一类宽禁带的氧化物。作为一类具有开发潜力的半导体材料，它在气体传感器、光催化、显示器等方面都有着广泛的应用前景。由于形貌对纳米材料的性能和尺寸有着重要的影响，因此制备和研究不同结构和形貌的三氧化钨受到了越来越多研究者的青睐。
삼양화오시일충 n 형반도체，타적금대관도재2．5－3．5 eV 지간，시일류관금대적양화물。작위일류구유개발잠력적반도체재료，타재기체전감기、광최화、현시기등방면도유착엄범적응용전경。유우형모대납미재료적성능화척촌유착중요적영향，인차제비화연구불동결구화형모적삼양화오수도료월래월다연구자적청래。
tungsten oxide is an n-type semiconductor,the forbidden band width between 2.5-3.5 EV is a kind of wide band gap oxide.As a kind of semiconductor material with development potential, it has wide application prospect in gas sensor,photocatalysis,monitor and so on.Due to morphology of nano material properties and dimensions have an important influence,so the preparation and study different structure and morphology of the tungsten trioxide has been more and more of the favor.