真空
真空
진공
Vacuum
2015年
6期
14-18
,共5页
王晓明%吴川%周艳文%张绪跃%王复栋%王明磊
王曉明%吳川%週豔文%張緒躍%王複棟%王明磊
왕효명%오천%주염문%장서약%왕복동%왕명뢰
磁场分布%磁控溅射%数值模拟
磁場分佈%磁控濺射%數值模擬
자장분포%자공천사%수치모의
magnetic field distribution%magnetron sputtering%numerical simulation
本文采用计算机 FORTRAN 语言自主编程,通过建立通电线圈磁场的数学模型,对磁控溅射靶附近由通电线圈产生的磁场分布进行了二维数值模拟计算。计算表明当内、外线圈加反向电流,增加内或外线圈电流,可使通电线圈产生的磁场非平衡度增加,其增加强度由电流增加强度所决定。随着内或外线圈电流增加,真空腔内磁场强度分布更均匀。通过调节内、外电线圈电流,控制磁场分布,从而控制其对等离子体密度及能量分布,可使等离子体因磁场的均匀分布而在真空腔内分布均匀化。另外,这种外加的电磁场还会使磁控装置本体磁场增强,因此对磁控溅射产生的等离子体有增强作用。此结果为磁控溅射装置上磁场配置提供重要参考依据。
本文採用計算機 FORTRAN 語言自主編程,通過建立通電線圈磁場的數學模型,對磁控濺射靶附近由通電線圈產生的磁場分佈進行瞭二維數值模擬計算。計算錶明噹內、外線圈加反嚮電流,增加內或外線圈電流,可使通電線圈產生的磁場非平衡度增加,其增加彊度由電流增加彊度所決定。隨著內或外線圈電流增加,真空腔內磁場彊度分佈更均勻。通過調節內、外電線圈電流,控製磁場分佈,從而控製其對等離子體密度及能量分佈,可使等離子體因磁場的均勻分佈而在真空腔內分佈均勻化。另外,這種外加的電磁場還會使磁控裝置本體磁場增彊,因此對磁控濺射產生的等離子體有增彊作用。此結果為磁控濺射裝置上磁場配置提供重要參攷依據。
본문채용계산궤 FORTRAN 어언자주편정,통과건립통전선권자장적수학모형,대자공천사파부근유통전선권산생적자장분포진행료이유수치모의계산。계산표명당내、외선권가반향전류,증가내혹외선권전류,가사통전선권산생적자장비평형도증가,기증가강도유전류증가강도소결정。수착내혹외선권전류증가,진공강내자장강도분포경균균。통과조절내、외전선권전류,공제자장분포,종이공제기대등리자체밀도급능량분포,가사등리자체인자장적균균분포이재진공강내분포균균화。령외,저충외가적전자장환회사자공장치본체자장증강,인차대자공천사산생적등리자체유증강작용。차결과위자공천사장치상자장배치제공중요삼고의거。
FORTRAN computer programming language is used to establish the mathematical models in this work. The two-dimensional simulation of the distribution of the magnetic field produced by hot-wire coil, locating under the target, was carried out. The result shows that the magnetic field unbalance degrees increase with increasing of the currents in the inner or outer coils when the reverse currents are applied on. The increments of the unbalance degrees are determined by the increments of the currents. With the increases of the inner or outer coil currents, the distributions of the magnetic field in the vacuum chamber get more homogeneous, as well as the distributions of the plasma homogeneous . Additionally, the electromagnetic field also strengthens the permanent magnetic field, which confines and extends the pathways of the electrons and increases the ionization ratios of the plasma. The result provides an important reference for the magnetic field configuration of the magnetron sputtering device.