CAJ | 학술논문

少数载流子寿命(以下简称少子寿命)是衡量晶硅半导体性能的重要参数.在实际生产中少子寿命受到多种因素的影响,如硅片厚度、杂质含量、晶粒均匀性、内部缺陷等.检测少子寿命主要的方法有三大类,根据载流子在半导体中产生的不同途径而有瞬态法、稳态法和准稳态法;根据光电压进行的检测;以及光束诱导电流法、电子束诱导电流法等其它方法,并指出这些方法的优缺点.
소수재류자수명(이하간칭소자수명)시형량정규반도체성능적중요삼수.재실제생산중소자수명수도다충인소적영향,여규편후도、잡질함량、정립균균성、내부결함등.검측소자수명주요적방법유삼대류,근거재류자재반도체중산생적불동도경이유순태법、은태법화준은태법;근거광전압진행적검측;이급광속유도전류법、전자속유도전류법등기타방법,병지출저사방법적우결점.
the minority carrier lifetime (hereinafter referred to as little sub life) is an important parameter to measure the performance of crystalline silicon semiconductor. In actual production, the little sub life is affected by many factors, such as the thickness of silicon wafer, impurity content, grain uniformity, internal defects and so on. There are three major methods for detecting the lifetime of the detector, which are transient, steady state and quasi steady state according to the different ways of carrier generation in semiconductor.