CAJ | 학술논문

分析了载流子迁移率，薄层载流子浓度、饱和电子漂移速度，导带断续，沟道温度等与自热效应的关系，建立了模拟AlGaN/GaN高电子迁移率晶体管直流I-V特性的解析模型。仿真结果同试验结果吻合良好，说明了该模型的正确性。
분석료재류자천이솔，박층재류자농도、포화전자표이속도，도대단속，구도온도등여자열효응적관계，건립료모의AlGaN/GaN고전자천이솔정체관직류I-V특성적해석모형。방진결과동시험결과문합량호，설명료해모형적정학성。
A accurate analytical model of I-V characteristics for AlGaN/GaN high electron mobility transistor(HEMT) is presented considering the relationship between self-heating effect and electron mobility, sheet carrier density, velocity saturation, conduction band discontinuity, and channel temperature. The comparison between simulations and physical calculation shows a good agreement, it is prove that this model is accurate.