CAJ | 학술논문

采用硅粉和金刚石微粉为原料,在氩气保护的管式气氛炉中烧结制备得到金刚石/碳化硅(Dia-mond/SiC)陶瓷复合材料。结果表明：硅粉与金刚石的混合料,在1410℃进行气氛烧结后,物相图谱中并未有 SiC 的特征峰出现；烧结温度为1450℃时,在金刚石表面会有 SiC 物相生成,且随温度提高,金刚石/碳化硅(Diamond/SiC)陶瓷复合材料产物中碳化硅的含量也会相应增加。在硅粉与金刚石微粉的混合料中,添加适量的铝粉(7wt%),然后在1300℃、1350℃和1410℃氩气保护气氛条件下进行烧结,均有 SiC 物相生成；与未添加铝粉的混合料烧结产物相比,铝粉的添加促进碳化硅在低于硅熔点(1410℃)的气氛烧结下生成,且添加铝粉的混合料烧结产物中碳化硅含量普遍提高,在烧结温度为1410℃时,SiC 含量最高达55.7wt%,生成的碳化硅完整地包覆在金刚石表面。
채용규분화금강석미분위원료,재아기보호적관식기분로중소결제비득도금강석/탄화규(Dia-mond/SiC)도자복합재료。결과표명：규분여금강석적혼합료,재1410℃진행기분소결후,물상도보중병미유 SiC 적특정봉출현；소결온도위1450℃시,재금강석표면회유 SiC 물상생성,차수온도제고,금강석/탄화규(Diamond/SiC)도자복합재료산물중탄화규적함량야회상응증가。재규분여금강석미분적혼합료중,첨가괄량적려분(7wt%),연후재1300℃、1350℃화1410℃아기보호기분조건하진행소결,균유 SiC 물상생성；여미첨가려분적혼합료소결산물상비,려분적첨가촉진탄화규재저우규용점(1410℃)적기분소결하생성,차첨가려분적혼합료소결산물중탄화규함량보편제고,재소결온도위1410℃시,SiC 함량최고체55.7wt%,생성적탄화규완정지포복재금강석표면。
Diamond/SiC ceramic composites has been synthesized by sintering silicon pow-der and diamond fine powder in SGQ protected by argon.Result shows that SiC phase will be formed on diamond surface at the temperature of 1450℃ and the content of SiC in the Diamond/SiC ceramic composite will increase accordingly as temperature increases. When right amount of aluminium powder (7wt%)has been added into the mixture of sili-con powder and diamond fine powder and sintered under the protection of argon at the temperatures of 1300℃,1350℃ and 1410℃,SiC phase will be formed.Compared to the sintering product by materials without aluminium powder,the application of aluminium powder promotes the generation of SiC below the silicon melting point(1410℃).Moreo-ver,the content of SiC in the sintering product with aluminium powder is generally in-creased.The content of SiC is up to 55.7wt% under the sintering temperature of 1410℃and the diamond is completely coated by the generated SiC.