CAJ | 학술논문

利用专利对氧化锌宽禁带半导体材料技术的研发实力、技术领域、专利原创性和普遍性态势进行中外比较，根据主要竞争国家的综合竞争地位分析，发现我国该领域技术研发中的问题。研究表明尽管我国的专利增长率不断提高，但高质量专利较少，研发机构竞争实力不足，属于技术相对落后者。最后利用SWOT分析对提高氧化锌宽禁带半导体技术的创新水平给出相应的建议。
이용전리대양화자관금대반도체재료기술적연발실력、기술영역、전리원창성화보편성태세진행중외비교，근거주요경쟁국가적종합경쟁지위분석，발현아국해영역기술연발중적문제。연구표명진관아국적전리증장솔불단제고，단고질량전리교소，연발궤구경쟁실력불족，속우기술상대락후자。최후이용SWOT분석대제고양화자관금대반도체기술적창신수평급출상응적건의。
Using patent analysis, this paper compares zinc oxide wide band gap semiconductor material industry in China and foreign countries from R&D strength, technical field, patent originality and generality. According to the analysis of comprehensive competition sta-tus of main countries, we found some problems in China:China's patent growth rate will continue to improve, but the technology is rela-tive backward with less high quality patents and lower competitiveness in R&D institutions. At last, based on a SWOT analysis conducted, some countermeasures to enhance the innovation of the industry in question are given.