CAJ | 학술논문

提出了一种嵌入吸收式单刀八掷开关电路结构。利用PIN二极管的通断特性，设计了1个在14～18 GHz频率范围内的吸收式单刀八掷(SP8T)开关电路，导通损耗小于3.9 dB，输出端回波损耗大于10 dB；隔离度大于60 dB，输入、输出端回波损耗大于12 dB。该电路将吸收电阻嵌入在基片下接地板内，相比传统结构的吸收式开关电路，具有在导通状态下损耗略小；在关断状态下输出端反射信号较小。该嵌入吸收式结构也可应用于吸收式的衰减电路及限幅电路中。
제출료일충감입흡수식단도팔척개관전로결구。이용PIN이겁관적통단특성，설계료1개재14～18 GHz빈솔범위내적흡수식단도팔척(SP8T)개관전로，도통손모소우3.9 dB，수출단회파손모대우10 dB；격리도대우60 dB，수입、수출단회파손모대우12 dB。해전로장흡수전조감입재기편하접지판내，상비전통결구적흡수식개관전로，구유재도통상태하손모략소；재관단상태하수출단반사신호교소。해감입흡수식결구야가응용우흡수식적쇠감전로급한폭전로중。
An embedding absorptive single-pole-eight-throw (SP8T) switch circuit structure is proposed. The absorptive SP8T switch based on PIN diode ON/OFF characteristic has been designed over a frequency range 14 GHz to 18 GHz with lower transmission loss less 3.9 dB, output return-loss more 10 dB at ON state, and isolation more 60 dB, input/output return-loss more 12 dB at OFF state. Comparing with conventional absorptive switch circuit, the SP8T switch posses the feature with transmission loss less at ON state and output reflection less at OFF state, because absorption resistance in the circuit is embedded in ground board under the substrate. More importantly, the embedding absorptive structure can be applied to absorptive attenuators and absorptive limiters.