CAJ | 학술논문

为改善 OLED 器件的载子注入平衡，本文在其结构 ITO/MoO3/NPB/Alq3/Cs2 CO3/Al 中，分别引入高电子迁移率材料 Bphen 及 Bphen∶Cs2 CO3作为电子传输层。通过改变 Bphen 的厚度以及 Bphen 中 Cs2 CO3的体积掺杂浓度，研究其对器件发光亮度、电流密度和效率等性能的影响。实验结果表明，采用 Bphen 或者 Bphen∶Cs2 CO3作为电子传输层，均能提高器件的电子注入能力，改善器件的性能。相比于未引入 Bphen 的器件，采用25 nm 的 Bphen 作为电子传输层，改善了器件的电子注入，使器件的最大电流效率提高112%；采用体积掺杂浓度为15%，厚度为5 nm 的 Bphen∶Cs2 CO3作为电子传输层，减小了电子注入势垒，使器件的最大电流效率提高27%，并且掺杂层厚度的改变对器件的电子注入影响很小。该方法可用于 OLED 器件的阴极修饰，对器件性能的提升将起到一定的促进作用。
위개선 OLED 기건적재자주입평형，본문재기결구 ITO/MoO3/NPB/Alq3/Cs2 CO3/Al 중，분별인입고전자천이솔재료 Bphen 급 Bphen∶Cs2 CO3작위전자전수층。통과개변 Bphen 적후도이급 Bphen 중 Cs2 CO3적체적참잡농도，연구기대기건발광량도、전류밀도화효솔등성능적영향。실험결과표명，채용 Bphen 혹자 Bphen∶Cs2 CO3작위전자전수층，균능제고기건적전자주입능력，개선기건적성능。상비우미인입 Bphen 적기건，채용25 nm 적 Bphen 작위전자전수층，개선료기건적전자주입，사기건적최대전류효솔제고112%；채용체적참잡농도위15%，후도위5 nm 적 Bphen∶Cs2 CO3작위전자전수층，감소료전자주입세루，사기건적최대전류효솔제고27%，병차참잡층후도적개변대기건적전자주입영향흔소。해방법가용우 OLED 기건적음겁수식，대기건성능적제승장기도일정적촉진작용。
In order to improve the balance of carrier injection,a high electron mobility material Bphen and Bphen ∶ Cs2 CO3 are introduced in OLED devices respectively based on the structure of ITO/MoO3/NPB/Alq3/Cs2 CO3/Al.The experiments study the effect of Bphen and Bphen doping Cs2 CO3 on the OLED devices of luminescence brightness,current density and efficiency by changing the thick-ness of Bphen and the volume concentration of Cs2 CO3 doped in Bphen.Experimental results show that Bphen or Bphen∶Cs2 CO3 used as electron transport layer both can improve electronic injection and the performance of devices.Compared with the devices without Bphen,adding 25 nm thickness Bphen as electron transport layer can improve the device of electron injection,which increase the max-imum current efficiency by 1 12%.Adding 5 nm thickness Bphen:Cs2 CO3 (15% volume concentration doped)as electron transport layer can reduce the electron injection barrier,which increase the maxi-mum current efficiency by 27%.However,changing the doping layer thickness has little impact on the device‘s electron injection.This method can be used in cathode decorate of OLED devices and play a certain role in promoting the devices’performance.