CAJ | 학술논문

利用磁控溅射技术,以 Mg0.06 Zn0.94 O 为陶瓷靶材,制备了 N 掺杂 p 型 Mg0.13 Zn0.87 O 薄膜,薄膜的电阻率为42.45Ω·cm,载流子浓度为3.70×1017/cm3,迁移率为0.40 cm2·V-1·s-1。研究了该薄膜 p 型导电性质在室温空气下随时间的变化情况。实验结果表明,薄膜的电阻率逐渐升高,载流子浓度降低,五个月以后,薄膜转变为 n 型导电,电阻率为85.58Ω·cm,载流子浓度为4.53×1016/cm3,迁移率为1.61 cm2·V-1·s-1。真空热退火后重新转变为 p 型。结果显示,其 p 型导电类型的转变与在空气中吸附 H 2 O 或 H 2等形成浅施主有关。
이용자공천사기술,이 Mg0.06 Zn0.94 O 위도자파재,제비료 N 참잡 p 형 Mg0.13 Zn0.87 O 박막,박막적전조솔위42.45Ω·cm,재류자농도위3.70×1017/cm3,천이솔위0.40 cm2·V-1·s-1。연구료해박막 p 형도전성질재실온공기하수시간적변화정황。실험결과표명,박막적전조솔축점승고,재류자농도강저,오개월이후,박막전변위 n 형도전,전조솔위85.58Ω·cm,재류자농도위4.53×1016/cm3,천이솔위1.61 cm2·V-1·s-1。진공열퇴화후중신전변위 p 형。결과현시,기 p 형도전류형적전변여재공기중흡부 H 2 O 혹 H 2등형성천시주유관。
Using radio frequency magnetron sputtering,p-type N doped Mg0.1 3 Zn0.8 7 O film was depos-ited on quartz substrate with Mg0.0 6 Zn0.94 O target.The film has resistivity of 42.45 W · cm,Hall mobility of 0.40 cm2 ·V-1 ·s-1 and carrier concentration of 3.70×10 1 7/cm3 .The stability of p-type conductivity in this film preserved in room temperature air ambient was studied.It is found that the re-sistivity increased and the carrier concentration decreased with time.The film transformed from p-type to n-type semiconductor with resistivity of 85.58 W·cm,Hall mobility of 1.61 cm2 ·V-1 ·s-1 and carrier concentration of 4.53×10 1 6/cm3 after preservation for five months.The film transformed to p-type semiconductor again after thermal annealing under 10 -4 Pa.It can be deduced that,the p-type film reverts to n-type conductivity because hydrogen and water were adsorbed by film to create shal-low donors in air ambient.