CAJ | 학술논문

以直流磁控反应溅射法（ RMS）在图形化蓝宝石衬底上制备的AlN薄膜作为缓冲层,采用金属有机化学气相沉积法（ MOCVD）外延生长了GaN基LED。与MOCVD生长的低温GaN缓冲层相比,RMS制备的AlN缓冲层具有表面更平整、颗粒更小的形核岛,有利于促进GaN外延的横向生长,减少了形核岛合并时的界面数量和高度差异,降低了缺陷和位错产生的几率。研究结果表明,溅射AlN缓冲层取代传统低温GaN缓冲层后,外延生长的GaN材料具有更高的晶体质量,LED器件在亮度、漏电和抗静电能力等光电特性上均有明显提升。
이직류자공반응천사법（ RMS）재도형화람보석츤저상제비적AlN박막작위완충층,채용금속유궤화학기상침적법（ MOCVD）외연생장료GaN기LED。여MOCVD생장적저온GaN완충층상비,RMS제비적AlN완충층구유표면경평정、과립경소적형핵도,유리우촉진GaN외연적횡향생장,감소료형핵도합병시적계면수량화고도차이,강저료결함화위착산생적궤솔。연구결과표명,천사AlN완충층취대전통저온GaN완충층후,외연생장적GaN재료구유경고적정체질량,LED기건재량도、루전화항정전능력등광전특성상균유명현제승。
AlN films were prepared on patterned sapphire substrates ( PSS) by direct-current reac-tive magnetron sputtering ( RMS) and used as buffer layers. The crystal quality and optical proper-ties of GaN films grown by metal-organic chemical vapor deposition ( MOCVD) with AlN buffer lay-ers were investigated. Compared with conventional low temperature GaN buffer layers, the RMS AlN buffer layers have smoother and smaller nucleation islands, which benefits the lateral growth and the coalesce of three-dimensional GaN islands. It is found that GaN-based LEDs with RMS AlN buffer layers have higher light output power, lower electric leakage and stronger electrostatic discharge ( ESD) characteristic owning to the lower threading dislocation density ( TDD) .