CAJ | 학술논문

文中研究了贯穿刻蚀硅基直壁沟槽及沟槽底部SiO2薄膜过刻蚀的深反应离子刻蚀（ DRIE）工艺过程。首先，研究了DRIE刻蚀钝化时间比（TSF 6∶TC4F8）对硅刻蚀形貌的影响。通过工艺参数优化，采用刻蚀钝化时间比分别为9 s／2 s、11 s／2 s（ C4 F8下电极射频功率为40 W）和11 s／2 s（ C4 F8下电极射频功率为0 W）的三步刻蚀工艺，贯穿刻蚀了宽度为150μm，深度为300μm的直壁沟槽。其次，研究了C4 F8（八氟环丁烷）钝化气体对SiO2薄膜过刻蚀的现象，采用降低C4 F8下电极射频功率方法，减小了 C4 F8对SiO2薄膜过刻蚀。
문중연구료관천각식규기직벽구조급구조저부SiO2박막과각식적심반응리자각식（ DRIE）공예과정。수선，연구료DRIE각식둔화시간비（TSF 6∶TC4F8）대규각식형모적영향。통과공예삼수우화，채용각식둔화시간비분별위9 s／2 s、11 s／2 s（ C4 F8하전겁사빈공솔위40 W）화11 s／2 s（ C4 F8하전겁사빈공솔위0 W）적삼보각식공예，관천각식료관도위150μm，심도위300μm적직벽구조。기차，연구료C4 F8（팔불배정완）둔화기체대SiO2박막과각식적현상，채용강저C4 F8하전겁사빈공솔방법，감소료 C4 F8대SiO2박막과각식。
In this paper, the silicon etching process during etching of vertical wall groove by deep reactive ion etching ( DRIE) technique was studied .Firstly, the influence of the ratio of the etching and passivation time ( TSF6:TC4F8 ) on the profile of the etched silicon hole was investigated .By optimizing the process parameters , three etching steps with the ratio of the etching/pas-sivation time of 9 s/2 s, 11 s/2 s( C4 F8 power was set at 40 W) and 11s /2s ( C4 F8 power was set at 0 W) were usedW.ith the op -timized three etching steps , the groove with width of 150μm and depth of 300μm can be fabricated with vertical side wall .Second-ly, the effect of the passive gas (C4 F8) power on the degree of SiO2 over etching was studied.By decreasing the C4F8 power, the degree of SiO 2 over etching can be mitigated .