CAJ | 학술논문

针对半导体器件研制过程中等离子体刻蚀工艺的具体需要，研究了硅的低速率刻蚀和钨薄膜的刻蚀.得到了加磁场条件下刻蚀速率与刻蚀气体流量、射频功率的关系曲线.得到了不加磁场时不同刻蚀气体流量下钨的刻蚀速率，以及在刻蚀气体中掺杂不同比例氧气时硅的刻蚀速率.对上述结果加以简单的讨论并给出了符合工艺要求的刻蚀条件.
침대반도체기건연제과정중등리자체각식공예적구체수요，연구료규적저속솔각식화오박막적각식.득도료가자장조건하각식속솔여각식기체류량、사빈공솔적관계곡선.득도료불가자장시불동각식기체류량하오적각식속솔，이급재각식기체중참잡불동비례양기시규적각식속솔.대상술결과가이간단적토론병급출료부합공예요구적각식조건.
The etching of silicon at low rate and the etching of tungsten films are studied. The etching rate of such two materials is obtained at different runoffs of gas and different radio power for etching. The effects of magnetic field and adding oxygen on the etching velocity are also studied. Satisfied etching conditions are obtained.