CAJ | 학술논문

本实验对金花葵(Abelmoschusmanihot)幼苗进行剂量为0、30和50 Gy的电子束辐照,结果表明,电子束辐照对金花葵的成活率有影响,在实验范围内,随着辐射剂量的增加成活率降低；经辐射处理的幼苗在生长过程中有明显的矮化现象,且50 Gy处理的植株明显矮于30 Gy处理的；一定剂量的电子束辐照对金花葵的开花、结实、种子的成熟等生殖生长均有影响,当剂量为50Gy时则未能结实.同时,筛选出了8个适用于金花葵的随机引物,分别为 S10、S101、S168、S198、S217、S223、S248及S249.经RAPD分析显示,30和50 Gy辐照的植株与对照组的遗传距离分别为0.2840和0.3766,30 Gy辐照处理的植株所结种子与对照组所结种子的遗传距离为0.1034.
본실험대금화규(Abelmoschusmanihot)유묘진행제량위0、30화50 Gy적전자속복조,결과표명,전자속복조대금화규적성활솔유영향,재실험범위내,수착복사제량적증가성활솔강저；경복사처리적유묘재생장과정중유명현적왜화현상,차50 Gy처리적식주명현왜우30 Gy처리적；일정제량적전자속복조대금화규적개화、결실、충자적성숙등생식생장균유영향,당제량위50Gy시칙미능결실.동시,사선출료8개괄용우금화규적수궤인물,분별위 S10、S101、S168、S198、S217、S223、S248급S249.경RAPD분석현시,30화50 Gy복조적식주여대조조적유전거리분별위0.2840화0.3766,30 Gy복조처리적식주소결충자여대조조소결충자적유전거리위0.1034.
Abelmoschusmanihot seedlings were irradiated by electron beam at doses of 0,30 and 50 Gy. Survival rate of Abelmoschus manihot was influenced by electron beam irradiation.Growth was examined and genetic variation was studied by RAPD analysis.Plants irradiated by election beam showed a dwarf phenotype, plants irradiated at 50 Gy were lower than at 30 Gy.The reproductive growth of plants such as blossom, fructification and seed maturation were influenced,and such effect increased with doses;with irradiation at 50 Gy,plants stopped seeding all together.Eight appropriate random primers were screened:S10,S101,S168, S198,S217,S223,S248 and S249.RAPD analysis showed that genetic distance between control group and 30 Gy group,50 Gy group was 0.284 0 and 0.376 6 used leaves as experimental material.Genetic distance between controls seed and 30 Gy irradiated seed was 0.103 4.