现代电子技术
現代電子技術
현대전자기술
MODERN ELECTRONICS TECHNIQUE
2014年
13期
77-80
,共4页
Ka波段%砷化镓%微波单片集成电路%压控振荡器%pHEMT
Ka波段%砷化鎵%微波單片集成電路%壓控振盪器%pHEMT
Ka파단%신화가%미파단편집성전로%압공진탕기%pHEMT
Ka-band%GaAs%MMIC%VCO%pHEMT
基于0.25μm GaAs pHEMT工艺设计了Ka波段单片压控振荡器,该压控振荡器采用源极正反馈结构,变容管采用源极和漏极接地的pHEMT管。通过优化输出匹配网络和谐振网络以改善输出功率和相位噪声性能,使用蒙特卡洛成品率分析对本设计的成品率进行分析和改进。版图仿真结果显示:芯片输出频率为24.6~26.3 GHz,输出功率为(10±1)dBm,谐波抑制大于19 dB,芯片尺寸为1.5 mm×1 mm。
基于0.25μm GaAs pHEMT工藝設計瞭Ka波段單片壓控振盪器,該壓控振盪器採用源極正反饋結構,變容管採用源極和漏極接地的pHEMT管。通過優化輸齣匹配網絡和諧振網絡以改善輸齣功率和相位譟聲性能,使用矇特卡洛成品率分析對本設計的成品率進行分析和改進。版圖倣真結果顯示:芯片輸齣頻率為24.6~26.3 GHz,輸齣功率為(10±1)dBm,諧波抑製大于19 dB,芯片呎吋為1.5 mm×1 mm。
기우0.25μm GaAs pHEMT공예설계료Ka파단단편압공진탕기,해압공진탕기채용원겁정반궤결구,변용관채용원겁화루겁접지적pHEMT관。통과우화수출필배망락화해진망락이개선수출공솔화상위조성성능,사용몽특잡락성품솔분석대본설계적성품솔진행분석화개진。판도방진결과현시:심편수출빈솔위24.6~26.3 GHz,수출공솔위(10±1)dBm,해파억제대우19 dB,심편척촌위1.5 mm×1 mm。
A Ka-band MMIC VCO was designed with 0.25 μm GaAs pHEMT process. The source electrode positive feed-back structure is adopted for VCO. The pHEMT whose source electrode and drain electrode are connected to the ground is used for the varactor. The resonance network and the matching network are optimized to improve the output power and the phase noise performance. The yield of the VCO is analyzed and improved by the Monte-Carlo method. The simulation data shows the typical output power of VCO is 10±1 dBm,the output frequency of VCO is 24.6~26.3 GHz,the harmonic suppression is better than 19 dB. The chip size of the MMIC VCO is 1.5 mm×1 mm.