现代电子技术
現代電子技術
현대전자기술
MODERN ELECTRONICS TECHNIQUE
2014年
14期
128-131
,共4页
IPD%系统集成%高阻硅%无源器件%滤波器
IPD%繫統集成%高阻硅%無源器件%濾波器
IPD%계통집성%고조규%무원기건%려파기
IPD%system integration%high resistance silicon%passive device%filter
集成无源器件（IPD）技术可以将分立的无源器件集成在衬底内部，提高器件Q值及系统集成度。由于高阻硅衬底具有良好的射频特性，高阻硅IPD技术可以制备出Q值高达70以上的电感。高阻硅IPD基于薄膜技术具有高精度、高集成度等特点，可将无源器件特征尺寸缩小一个数量级。同时可利用成熟的硅工艺平台，便于批量生产降低成本。此外，高阻硅IPD技术可与硅通孔（TSV）技术兼容，可实现三维叠层封装。分析表明，高阻硅IPD技术在系统集成中具有广泛应用前景。
集成無源器件（IPD）技術可以將分立的無源器件集成在襯底內部，提高器件Q值及繫統集成度。由于高阻硅襯底具有良好的射頻特性，高阻硅IPD技術可以製備齣Q值高達70以上的電感。高阻硅IPD基于薄膜技術具有高精度、高集成度等特點，可將無源器件特徵呎吋縮小一箇數量級。同時可利用成熟的硅工藝平檯，便于批量生產降低成本。此外，高阻硅IPD技術可與硅通孔（TSV）技術兼容，可實現三維疊層封裝。分析錶明，高阻硅IPD技術在繫統集成中具有廣汎應用前景。
집성무원기건（IPD）기술가이장분립적무원기건집성재츤저내부，제고기건Q치급계통집성도。유우고조규츤저구유량호적사빈특성，고조규IPD기술가이제비출Q치고체70이상적전감。고조규IPD기우박막기술구유고정도、고집성도등특점，가장무원기건특정척촌축소일개수량급。동시가이용성숙적규공예평태，편우비량생산강저성본。차외，고조규IPD기술가여규통공（TSV）기술겸용，가실현삼유첩층봉장。분석표명，고조규IPD기술재계통집성중구유엄범응용전경。
Integrated passive device(IPD)technology can integrate discrete passive devices into a substrate,and improve the Q factor and system integration level. The inductor whose Q factor is up to 70 can be prepared by high resistance silicon IPD (HRS-IPD) technology because the HRS substrate has a good RF property. HRS-IPD based on thin film technology has the characteristics of high precision and high integration;meanwhile,by which the feature size can be reduced by one order of mag-nitude. Batch fabrication with lower cost can be realized with the mature silicon technology. Furthermore,HRS-IPD technology can be combined with through silicon via(TSV)technology to realize 3D system packaging. The analyses indicate that the HRS-IPD technology has a good application prospect in system integration.
