现代电子技术
現代電子技術
현대전자기술
MODERN ELECTRONICS TECHNIQUE
2014年
17期
68-71
,共4页
ADS%微带线%单路宽带低噪声放大器%PHEMT放大器
ADS%微帶線%單路寬帶低譟聲放大器%PHEMT放大器
ADS%미대선%단로관대저조성방대기%PHEMT방대기
ADS%microstrip line%single-charmel wideband low-noise amplifier%PHEMT amplification
使用微波仿真软件ADS设计了一款用于2.0~3.5 GHz无线通信的宽带低噪声放大器。匹配网络采用微带线，减小了分立元件的寄生效应。详细阐述了提高放大器稳定性的方法，实现了PHEMT 放大器在全频段的稳定性，并分析了源极反馈电感对放大器性能的影响。在2.0~3.5 GHz频段内，放大器增益为12 dB左右，增益平坦度为0.23 dB，最大噪声系数为2.8 dB，输入输出驻波比小于2，三阶输出截点值OIP3大于35.5 dBm。设计的放大器可以用于无线通信的前段中。
使用微波倣真軟件ADS設計瞭一款用于2.0~3.5 GHz無線通信的寬帶低譟聲放大器。匹配網絡採用微帶線，減小瞭分立元件的寄生效應。詳細闡述瞭提高放大器穩定性的方法，實現瞭PHEMT 放大器在全頻段的穩定性，併分析瞭源極反饋電感對放大器性能的影響。在2.0~3.5 GHz頻段內，放大器增益為12 dB左右，增益平坦度為0.23 dB，最大譟聲繫數為2.8 dB，輸入輸齣駐波比小于2，三階輸齣截點值OIP3大于35.5 dBm。設計的放大器可以用于無線通信的前段中。
사용미파방진연건ADS설계료일관용우2.0~3.5 GHz무선통신적관대저조성방대기。필배망락채용미대선，감소료분립원건적기생효응。상세천술료제고방대기은정성적방법，실현료PHEMT 방대기재전빈단적은정성，병분석료원겁반궤전감대방대기성능적영향。재2.0~3.5 GHz빈단내，방대기증익위12 dB좌우，증익평탄도위0.23 dB，최대조성계수위2.8 dB，수입수출주파비소우2，삼계수출절점치OIP3대우35.5 dBm。설계적방대기가이용우무선통신적전단중。
A broadband band amplifier with low noise was developed for wireless communication at 2.0~3.5 GHz by means of the microwave simulation software ADS. Microstrip lines are employed to design matching circuits and reduce the parasitics of discrete elements. The method of improving the stability of amplifier is elaborated. The PHEMT amplifier’s stability in whole band was implemented. The effects of source electrode feedback inductance on performances of the amplifier were analyzed. In the frequency range of 2.0~3.5 GHz,the amplifier gain is about 12 dB,gain flatness 0.23 dB,highest noise figure is 2.8 dB, input and output SWRs are less than 2,and output third-order intercept point(OIP3)is over 35.5 dBm. The designed amplifier can be used in the front-end of wireless communication.
